发明名称 SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
摘要 This method for manufacturing a semiconductor substrate is provided with: an element formation step for forming a plurality of element regions in a substrate part; a first wiring step for forming circuit wiring that is connected to the element region; an electrode pad formation step for forming a plurality of electrode pads; a second wiring step for forming potential adjustment wiring that electrically connects at least some of the plurality of electrode pads; an electrode formation step for forming an electrode body on the electrode pad by electroless plating after the second wiring step; and a potential adjustment termination step for terminating the connection by the potential adjustment wiring after the electrode formation step.
申请公布号 WO2015033652(A1) 申请公布日期 2015.03.12
申请号 WO2014JP67551 申请日期 2014.07.01
申请人 OLYMPUS CORPORATION 发明人 MIGITA CHIHIRO;ISHIDA HISASHI;TAKEMOTO YOSHIAKI
分类号 H01L21/3205;H01L21/60;H01L21/768;H01L23/522 主分类号 H01L21/3205
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