发明名称 |
SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME |
摘要 |
This method for manufacturing a semiconductor substrate is provided with: an element formation step for forming a plurality of element regions in a substrate part; a first wiring step for forming circuit wiring that is connected to the element region; an electrode pad formation step for forming a plurality of electrode pads; a second wiring step for forming potential adjustment wiring that electrically connects at least some of the plurality of electrode pads; an electrode formation step for forming an electrode body on the electrode pad by electroless plating after the second wiring step; and a potential adjustment termination step for terminating the connection by the potential adjustment wiring after the electrode formation step. |
申请公布号 |
WO2015033652(A1) |
申请公布日期 |
2015.03.12 |
申请号 |
WO2014JP67551 |
申请日期 |
2014.07.01 |
申请人 |
OLYMPUS CORPORATION |
发明人 |
MIGITA CHIHIRO;ISHIDA HISASHI;TAKEMOTO YOSHIAKI |
分类号 |
H01L21/3205;H01L21/60;H01L21/768;H01L23/522 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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