| 发明名称 |
Semiconductor Devices and Methods of Forming Same |
| 摘要 |
Embodiments of the present disclosure include a semiconductor device and methods of forming the same. An embodiment is a method for of forming a semiconductor device, the method including forming a first conductive feature over a substrate, forming a dielectric layer over the conductive feature, and forming an opening through the dielectric layer to the first conductive feature. The method further includes selectively forming a first capping layer over the first conductive feature in the opening, and forming a second conductive feature on the first capping layer. |
| 申请公布号 |
US2015069620(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201314021649 |
申请日期 |
2013.09.09 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd |
发明人 |
Chi Chih-Chien;Huang Huang-Yi;Tung Szu-Ping;Hsieh Ching-Hua |
| 分类号 |
H01L23/522;H01L21/768 |
主分类号 |
H01L23/522 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for of forming a semiconductor device, the method comprising:
forming a first conductive feature over a substrate; forming a dielectric layer over the conductive feature; forming an opening through the dielectric layer to the first conductive feature; selectively forming a first capping layer over the first conductive feature in the opening; and forming a second conductive feature on the first capping layer. |
| 地址 |
Hsin-Chu TW |
