| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
According to one embodiment, a method of manufacturing a semiconductor device includes dry-etching a member containing silicon in a first pressure range equal to or more than a first pressure or in a second pressure range equal to or less than a second pressure, wherein the first pressure is obtained by multiplying a saturated pressure by 0.85, the saturated pressure is defined as a pressure under which an etching rate is one of a maximum value or a value obtained by multiplying the maximum value by a predetermined coefficient, and the etching rate is a half value of the maximum value under the second pressure. |
| 申请公布号 |
US2015072503(A1) |
申请公布日期 |
2015.03.12 |
| 申请号 |
US201414202697 |
申请日期 |
2014.03.10 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
Iguchi Tomoyuki |
| 分类号 |
H01L21/306;H01L21/762 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
dry-etching on a member containing silicon in a first pressure range equal to or more than a first pressure or in a second pressure range equal to or less than a second pressure, wherein the first pressure is obtained by multiplying a saturated pressure by 0.85, the saturated pressure is defined as a pressure under which an etching rate is one of a maximum value or a value obtained by multiplying the maximum value by a predetermined coefficient, and the etching rate is a half value of the maximum value under the second pressure. |
| 地址 |
TOKYO JP |
