| 摘要 |
Proposed is a non-volatile semiconductor storage device with which, while effecting miniaturization, it is possible to suppress a disturb occurrence better than before. In a non-volatile semiconductor storage device, forming a plurality of words in a matrix, disposing a power source unit for each word line column (memory well), imparting a different unit voltage to each power source unit corresponding to whether a selected memory well is present in a given word line column, switching on a word line unit basis a switch mechanism of each power source unit according to a control line voltage value, and individually imparting to each word line either a charge storage gate voltage or a charge storage interdiction gate voltage, it is possible to freely set for each word line column a charge storage interdiction gate voltage value or a bit line voltage value which is capable of suppressing a disturb occurrence. A plurality of power source units are connected to a common control line in the row direction, obviating the need for a separate address decoder for each word column line, and allowing effecting miniaturization. |
