发明名称 MEMS device and method of manufacture
摘要 A MEMS logic device comprising agate which pivots on a torsion hinge, two conductive channels on the gate, one on each side of the torsion hinge, source and drain landing pads under the channels, and two body bias elements under the gate, one on each side of the torsion hinge, so that applying a threshold bias between one body bias element and the gate will pivot the gate so that one channel connects the respective source and drain landing pad, and vice versa. An integrated circuit with MEMS logic devices on the dielectric layer, with the source and drain landing pads connected to metal interconnects of the integrated circuit. A process of forming the MEM switch.
申请公布号 US8975722(B2) 申请公布日期 2015.03.10
申请号 US201414282892 申请日期 2014.05.20
申请人 Texas Instruments Incorporated 发明人 Hall James N.;Barron Lance W.;Gong Cuiling
分类号 H01L21/70;H01L27/118;G11C23/00;H01L21/77 主分类号 H01L21/70
代理机构 代理人 Garner Jacqueline J.;Telecky, Jr. Frederick J.
主权项 1. An integrated circuit, comprising: a microelectromechanical system (MEMS) logic device including: an electrically conductive terminal on a substrate;electrically conductive first source and first drain landing pads on the substrate proximate to a first side of the terminal;electrically conductive second source and second drain landing pads on the substrate proximate to a second side opposite to the first side of the terminal;an electrically conductive first body bias element on the substrate adjacent to the first side of the terminal;an electrically conductive second body bias element on the substrate adjacent to the second side of the terminal;an electrically conductive torsion hinge electrically connected to the terminal;an electrically conductive pivotable gate attached to and supported above the substrate on the torsion hinge;an isolation layer on the pivotable gate;an electrically conductive first channel on the isolation layer, the first channel including a first source contact over the first source landing pad and a first drain contact over the first drain landing pad, the first channel being electrically isolated from the pivotable gate; andan electrically conductive second channel on the isolation layer, the second channel including a second source contact over the second source landing pad and a second drain contact over the second drain landing pad, the second channel being electrically isolated from the pivotable gate.
地址 Dallas TX US