| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor laser device which has higher light extraction efficiency than in the past.SOLUTION: A semiconductor laser device comprises: a semiconductor substrate; a first mirror formed in an upper layer of a first surface of substrate surfaces of the semiconductor substrates; a light emitting part formed in an upper layer of the first mirror; a second mirror formed in an upper layer of the light emitting part; a contact layer formed in a manner such that at least a part of a bottom face contacts a top face of an outer edge part of the second mirror but does not contact inside the outer edge part; a first electrode formed in contact with a second surface of the substrate faces, which is on the opposite side to the first surface; and a second electrode formed in an upper layer of the contact layer. The semiconductor substrate has on the second surface side, a first convexoconcave part in a direction orthogonal to the substrate surface, which have thicknesses different from each other. The first electrode has a second convexoconcave part which fits in the first convexoconcave part. Light is extracted in a direction from the inside region of the outer edge part of the second mirror to the opposite side to an arrangement position of the semiconductor substrate.</p> |
