| 摘要 |
<p>The objective of the present invention is to provide: a photoelectric conversion element which has excellent responsivity and high photoelectric conversion efficiency, and which can be produced by vapor deposition; and an optical sensor and an imaging element, each of which comprises this photoelectric conversion element. A photoelectric conversion element according to the present invention is provided with a conductive film, a photoelectric conversion film containing a photoelectric conversion material, and a transparent conductive film in this order. The photoelectric conversion material contains a compound (A) represented by formula (1) and an n-type semiconductor.</p> |
