发明名称 Low noise amplifier
摘要 A low noise amplifier comprises at least one amplifying transistor (Ts1; Ts2) configured in a common source configuration to receive an input signal (RFin) at a gate terminal and provide an amplified signal at a drain terminal and at least one feedback path arranged to couple a part of the amplified signal back to the gate terminal and comprising a feedback impedance. The low noise amplifier further comprises a self-coupled step-up transformer having at least one primary winding (Lp) connected to a supply voltage (Vdd) and the drain terminal of the at least one amplifying transistor and at least one self-coupled secondary inductor winding (Lf1; Lf2) arranged in the feedback path. The low noise amplifier provides a better suppression for out-band interference and at the same time it has a wider input match bandwidth, decent conversion gain and decent noise figure without increasing power consumption.
申请公布号 US8965322(B2) 申请公布日期 2015.02.24
申请号 US201113992804 申请日期 2011.12.09
申请人 Telefonaktiebolaget L M Ericsson (Publ) 发明人 Mu Fenghao
分类号 H04B1/10;H03F1/22;H03F1/34;H03F3/45;H03F3/193 主分类号 H04B1/10
代理机构 Coats & Bennett, PLLC 代理人 Coats & Bennett, PLLC
主权项 1. A low noise amplifier comprising: at least one amplifying transistor configured in a common source configuration to receive an input signal at a gate terminal and provide an amplified signal at a drain terminal; at least one feedback path arranged to couple a part of the amplified signal back to the gate terminal and comprising a feedback impedance; a self-coupled step-up transformer comprising: at least one primary winding connected to a supply voltage and the drain terminal of the at least one amplifying transistor; andat least one self-coupled secondary inductor winding arranged in the feedback path.
地址 Stockholm SE