| 摘要 |
<p>A memory includes a cell array which includes a plurality of word lines, an address counting unit which generates a counting address which is changed when the cell array is refreshed, and a control unit which selects a word line corresponding to the counting address among the word lines in a refresh operation, refreshes the cell array with a first period in response to a refresh command inputted with a preset period in a first refresh operation, refreshes the cell array with a second period which is longer than the first period in a second refresh mode, and refreshes the cell array with a third period which is shorter than the second period for a high frequency section after the entry of the second refresh mode.</p> |
