| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a reflective mask capable of forming steps in a side wall part by digging Si (silicon) or Mo (molybdenum) of a multilayer reflective layer by etching to obtain a light shielding frame high in shielding performance.SOLUTION: In a reflective mask having a light shielding frame formed by removing a multilayer reflective layer in a periphery specifying the inside and outside of a pattern area, the side wall part of the light shielding frame includes a periodic step structure formed by side-etching one of layers constituting the multilayer reflective layer. The reflectance of EUV light irradiated at an incident angle of 6° or less to the reflective mask is 1.5% or less in an area within a range spaced forward and backward by a distance (nearly 28 to 29 nm) of a multilayer reflective layer thickness×tan6° from the edge of the light shielding frame to a multilayer reflective layer side and a light shielding frame side.</p> |
