HARD MASK FOR SOURCE/DRAIN EPITAXY CONTROL

摘要

An integrated circuit is formed to include a first polarity MOS transistor and a second, opposite, polarity MOS transistor. A hard mask of silicon-doped boron nitride (SixBN) with 1 atomic percent to 30 atomic percent silicon is formed over the first polarity MOS transistor and the second polarity MOS transistor. The hard mask is removed from source/drain regions of the first polarity MOS transistor and left in place over the second polarity MOS transistor. Semiconductor material is epitaxially grown at the source/drain regions of the first polarity MOS transistor while the hard mask is in place. Subsequently, the hard mask is removed from the second polarity MOS transistor.

主权项

1. A method of forming an integrated circuit, comprising the steps of:
providing a substrate comprising a semiconductor; forming a first metal oxide semiconductor (MOS) transistor having a first polarity on said substrate; forming a second MOS transistor having a second, opposite, polarity on said substrate; forming a layer of silicon-doped boron nitride over said first MOS transistor and said second MOS transistor, said layer of silicon-doped boron nitride having 1 atomic percent to 30 atomic percent of silicon; removing said layer of silicon-doped boron nitride from over said first MOS transistor; and forming epitaxial source and drain regions on said substrate adjacent to source/drain (S/D) spacers of said first MOS transistor, said S/D spacers being disposed on lateral surfaces of a gate of said first MOS transistor.