Methods of removing contaminant impurities during the manufacture of a thin film transistor by applying water in which ozone is dissolved

摘要

The present invention is provided in order to remove contamination due to contaminant impurities of the interfaces of each film which forms a TFT, which is the major factor that reduces the reliability of TFTs. By connecting a washing chamber and a film formation chamber, film formation can be carried out without exposing TFTs to the air during the time from washing step to the film formation step and it becomes possible to maintain the cleanliness of the interfaces of each film which form the TFT.

主权项

1. A method for manufacturing a semiconductor device comprising:
forming a semiconductor layer over a substrate in a film formation unit; forming an oxide film on the semiconductor layer by applying water in which ozone is dissolved while spinning the substrate in the film formation unit; removing the oxide film and contaminant impurities on the semiconductor layer in the film formation unit; forming a gate insulating film on and in direct contact with the semiconductor layer; and forming a gate electrode on the gate insulating film.