| 发明名称 | Film forming method | ||
| 摘要 | One embodiment of the present invention is a film forming method comprising: arranging a surface of a film formation substrate 10 including an absorption layer 12 on a first substrate 11 and a material layer 13 containing a film formation material and a surface of a film-formation target substrate 20 including a first layer 23 over a second substrate 22, so as to face each other; forming a second layer 13a containing the film formation material over the first layer 23 by performing first heat treatment on the material layer 13; and forming a third layer 13b containing the film formation material over the second layer 13a by performing second heat treatment on the material layer 13. In the second heat treatment, energy with a density higher than that in the first heat treatment is applied to the material layer. | ||
| 申请公布号 | US8951816(B2) | 申请公布日期 | 2015.02.10 |
| 申请号 | US201113635201 | 申请日期 | 2011.02.28 |
| 申请人 | Semiconductor Energy Laboratory Co., Ltd.;Sharp Kabushiki Kaisha | 发明人 | Tsuruoka Rena;Ikeda Hisao;Tsurume Takuya;Sonoda Tohru;Inoue Satoshi |
| 分类号 | H01L21/00;H01L51/00;C23C14/04;H01L51/56 | 主分类号 | H01L21/00 |
| 代理机构 | Husch Blackwell LLP | 代理人 | Husch Blackwell LLP |
| 主权项 | 1. A film forming method comprising: arranging a surface of a film formation substrate including an absorption layer on a first substrate and a material layer containing a film formation material on the absorption layer and a surface of a film-formation target substrate including a first layer over a second substrate, so as to face each other; forming a second layer containing the film formation material over the first layer by performing first heat treatment on the material layer from the other surface of the film formation substrate; and forming a third layer containing the film formation material over the second layer by performing second heat treatment on the material layer from the other surface of the film formation substrate, wherein energy with a density higher than that in the first heat treatment is applied to the material layer in the second heat treatment. | ||
| 地址 | JP | ||