发明名称 Calculation method for generating layout pattern in photomask
摘要 A calculation method for generating a layout pattern in a photomask includes at least the following steps. A two-dimensional design layout including several geometric patterns distributed in a plane is provided to a computer system. The computer system is used to mark portions of the geometric patterns and generate at least one marked geometric pattern and at least one non-marked geometric pattern. The marked geometric pattern is then simulated and corrected by the computer system so as to generate a 3-D design layout. Through the simulation and correction, the marked geometric pattern and the non-marked geometric pattern are arranged alternately along an axis orthogonal to the plane. The 3-D design layout is outputted to a mask-making system afterwards.
申请公布号 US8954919(B1) 申请公布日期 2015.02.10
申请号 US201314069391 申请日期 2013.11.01
申请人 United Microelectronics Corp. 发明人 Liou En-Chiuan;Lee Sho-Shen;Huang Wen-Liang;Wang Chang-Mao;Chuang Kai-Lin;Huang Yu-Chin
分类号 G06F17/50 主分类号 G06F17/50
代理机构 代理人 Hsu Winston;Margo Scott
主权项 1. A calculation method for generating a layout pattern in a photomask, comprising: providing a computer system having a computer readable storage device; providing a two-dimensional (2-D) design layout to the computer system, wherein the 2-D design layout comprises a plurality of geometric patterns distributed in a plane; marking portions of the geometric patterns to generate at least one marked geometric pattern and at least one non-marked geometric pattern; moving the marked geometric pattern along an axis orthogonal to the plane so as to convert the 2-D design layout to a three-dimensional (3-D) design layout, wherein the marked geometric pattern and the non-marked geometric pattern of the 3-D design layout are arranged alternately along the axis orthogonal to the plane; and outputting the 3-D design layout to a mask-making system.
地址 Science-Based Industrial Park, Hsin-Chu TW