MIDDLE-OF-LINE BORDERLESS CONTACT STRUCTURE AND METHOD OF FORMING

摘要

Various embodiments disclosed include semiconductor structures and methods of forming such structures. In one embodiment, a method includes: providing a semiconductor structure including: a substrate; at least one gate structure overlying the substrate; and an interlayer dielectric overlying the substrate and the at least one gate structure; removing the ILD overlying the substrate to expose the substrate; forming a silicide layer over the substrate; forming a conductor over the silicide layer and the at least one gate structure; forming an opening in the conductor to expose a portion of a gate region of the at least one gate structure; and forming a dielectric in the opening in the conductor.

主权项

1. A method comprising:
providing a semiconductor structure including:
a substrate;at least one gate structure overlying the substrate, the at least one gate structure having:
a gate region contacting the substrate;a set of spacers adjacent to the gate region and contacting the substrate;a replacement metal gate (RMG) cap overlying the gate region between the set of spacers; andan interlayer dielectric (ILD) overlying the substrate and substantially surrounding the at least one gate structure; removing the ILD overlying the substrate to expose the substrate; forming a silicide layer over the substrate; forming a conductor over the silicide layer and the at least one gate structure; forming an opening in the conductor to expose a portion of the gate region; and forming a dielectric in the opening in the conductor.