| 摘要 |
<p>In a nickel film forming method, an initial Ni film is formed on a substrate by a chemical vapor deposition (CVD) process by using a nickel-containing compound having a molecular structure in which a ligand containing a nitrogen-carbon bond is included and nitrogen of the ligand coordinates with nickel as a film forming source material and at least one selected from ammonia, hydrazine, and derivatives thereof as a reduction gas. Further, a main Ni film is formed on the initial Ni film by CVD by using the nickel-containing compound as the film forming source material and hydrogen gas as the reduction gas.</p> |
