SYSTEMS AND METHODS TO MITIGATE NITRIDE PRECIPITATES

摘要

A method of fabricating a semiconductor device is disclosed. A substrate having an oxide layer is provided. At least a portion of the oxide layer is removed and forms a nitride layer. The nitride layer is removed, leaving nitride precipitates. The nitride precipitates are removed using phosphoric acid.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
providing a substrate having an oxide layer; removing at least a portion of the oxide layer by reacting HF and NH3 with the oxide layer to form a nitride layer over an unconsumed portion of the oxide layer; removing the nitride layer and leaving a nitride precipitate byproduct on the unconsumed portion of the oxide layer; and removing the nitride precipitate byproduct by dipping the substrate in a liquid solution of phosphoric acid.