NITRIDE-BASED SEMICONDUCTOR DEVICES

摘要

A nitride-based semiconductor device includes a barrier structure on a substrate, a nitride semiconductor layer on the barrier structure, and a source electrode, a drain electrode, and a gate electrode on the nitride semiconductor layer to be separated from each other. The barrier structure includes a first semiconductor layer having a first conductivity, a second semiconductor layer having a second conductivity on the first semiconductor layer, a third semiconductor layer having the first conductivity on the second semiconductor layer, and a fourth semiconductor layer having the second conductivity on the third semiconductor layer. A two-dimensional electrode gas (2DEG) channel is formed in the nitride semiconductor layer.

主权项

1. A nitride-based semiconductor device comprising:
a barrier structure on a substrate, the barrier structure including,
a first semiconductor layer having a first conductivity type,a second semiconductor layer on the first semiconductor layer, the second semiconductor layer having a second conductivity type,a third semiconductor layer on the second semiconductor layer, the third semiconductor layer having the first conductivity type, anda fourth semiconductor layer on the third semiconductor layer, the fourth semiconductor layer having the second conductivity type; a nitride semiconductor layer on the barrier structure, the nitride semiconductor layer including a two-dimensional electrode gas (2DEG) channel; and a source electrode, a drain electrode, and a gate electrode on the nitride semiconductor layer, the source electrode, the drain electrode and the gate electrode being separate from each other.