发明名称 |
Surface acoustic wave resonator, surface acoustic wave oscillator, and electronic instrument |
摘要 |
A SAW resonator which, using a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 41.9°≦|ψ|≦49.57°), includes an IDT that excites a stop band upper end mode SAW, and an inter-electrode finger groove provided between electrode fingers configuring the IDT. When a wavelength of the SAW is λ, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is η, and an electrode film thickness of the IDT is H, λ, G, η and H satisfy the relationship of 0<H≦0.005λ, 0.01λ≦G≦0.09λ, and 0.18≦η≦0.71. |
申请公布号 |
US8933612(B2) |
申请公布日期 |
2015.01.13 |
申请号 |
US201213460149 |
申请日期 |
2012.04.30 |
申请人 |
Seiko Epson Corporation |
发明人 |
Yamanaka Kunihito |
分类号 |
H03H9/25;H03H9/02;H03H9/145 |
主分类号 |
H03H9/25 |
代理机构 |
Harness, Dickey & Pierce, P.L.C. |
代理人 |
Harness, Dickey & Pierce, P.L.C. |
主权项 |
1. A surface acoustic wave resonator provided on a quartz crystal substrate with Euler angles (−1.5°≦φ≦1.5°, 117°≦θ≦142°, and 41.9°≦|ψ|≦49.57°), comprising:
an interdigital transducer (IDT) that excites a stop band upper end mode surface acoustic wave; and an inter-electrode finger groove provided between electrode fingers configuring the IDT, wherein when a wavelength of the surface acoustic wave is λ, a first depth of the inter-electrode finger groove is G, a line occupation rate of the IDT is η, and an electrode film thickness of the IDT is H, λ, G, η and H satisfy the relationship of0<H≦0.005λ,0.01λ≦G≦0.09λ, and0.18≦η≦0.71. |
地址 |
Tokyo JP |