发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device includes a memory array including memory blocks stacked in a plurality of layers over a substrate and an operation circuit suitable for performing a read operation and a program loop to memory cells included in the memory blocks, wherein word lines of the memory blocks are coupled to each other and a pair of the memory blocks are arranged vertically adjacent to each other and share bit lines.
申请公布号 US2015003157(A1) 申请公布日期 2015.01.01
申请号 US201314057867 申请日期 2013.10.18
申请人 SK hynix Inc. 发明人 ARITOME Seiichi
分类号 G11C16/04;G11C16/26 主分类号 G11C16/04
代理机构 代理人
主权项 1. A semiconductor memory device, comprising: a memory array including memory blocks stacked in a plurality of layers over a substrate; and an operation circuit suitable for performing a read operation and a program loop to memory cells included in the memory blocks, wherein word lines of the memory blocks are coupled to each other, and wherein a pair of the memory blocks are arranged vertically adjacent to each other and share bit lines.
地址 Gyeonggi-do KR