发明名称 |
SEMICONDUCTOR MEMORY DEVICE |
摘要 |
A semiconductor memory device includes a memory array including memory blocks stacked in a plurality of layers over a substrate and an operation circuit suitable for performing a read operation and a program loop to memory cells included in the memory blocks, wherein word lines of the memory blocks are coupled to each other and a pair of the memory blocks are arranged vertically adjacent to each other and share bit lines. |
申请公布号 |
US2015003157(A1) |
申请公布日期 |
2015.01.01 |
申请号 |
US201314057867 |
申请日期 |
2013.10.18 |
申请人 |
SK hynix Inc. |
发明人 |
ARITOME Seiichi |
分类号 |
G11C16/04;G11C16/26 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor memory device, comprising:
a memory array including memory blocks stacked in a plurality of layers over a substrate; and an operation circuit suitable for performing a read operation and a program loop to memory cells included in the memory blocks, wherein word lines of the memory blocks are coupled to each other, and wherein a pair of the memory blocks are arranged vertically adjacent to each other and share bit lines. |
地址 |
Gyeonggi-do KR |