发明名称 Through-vias and methods of forming the same
摘要 An integrated circuit structure includes a substrate, a metal ring penetrating through the substrate, a dielectric region encircled by the metal ring, and a through-via penetrating through the dielectric region. The dielectric region is in contact with the through-via and the metal ring.
申请公布号 US8916979(B2) 申请公布日期 2014.12.23
申请号 US201313762248 申请日期 2013.02.07
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Tsai Chung-Hao;Yeh En-Hsiang;Wang Chuei-Tang
分类号 H01L23/48;H01L23/52;H01L29/40;H01L21/768 主分类号 H01L23/48
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. An integrated circuit structure comprising: a substrate comprising a front surface and a back surface; a ring penetrating through the substrate; an active region at the front surface of the substrate; a dielectric region encircled by the ring, wherein the ring, the dielectric region, and the substrate comprise different materials; and a through-via penetrating through the dielectric region, with the dielectric region contacting the through-via and the rin wherein the dielectric region is wider at the back surface of the substrate than at the front surface of the substrate.
地址 Hsin-Chu TW