发明名称 |
Through-vias and methods of forming the same |
摘要 |
An integrated circuit structure includes a substrate, a metal ring penetrating through the substrate, a dielectric region encircled by the metal ring, and a through-via penetrating through the dielectric region. The dielectric region is in contact with the through-via and the metal ring. |
申请公布号 |
US8916979(B2) |
申请公布日期 |
2014.12.23 |
申请号 |
US201313762248 |
申请日期 |
2013.02.07 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Tsai Chung-Hao;Yeh En-Hsiang;Wang Chuei-Tang |
分类号 |
H01L23/48;H01L23/52;H01L29/40;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
Slater & Matsil, L.L.P. |
代理人 |
Slater & Matsil, L.L.P. |
主权项 |
1. An integrated circuit structure comprising:
a substrate comprising a front surface and a back surface; a ring penetrating through the substrate; an active region at the front surface of the substrate; a dielectric region encircled by the ring, wherein the ring, the dielectric region, and the substrate comprise different materials; and a through-via penetrating through the dielectric region, with the dielectric region contacting the through-via and the rin wherein the dielectric region is wider at the back surface of the substrate than at the front surface of the substrate. |
地址 |
Hsin-Chu TW |