Semiconductor light emitting device including substrate having protection layers providing protection against chemicals and method for manufacturing the same

摘要

The present invention provides a compound semiconductor light emitting device including: an Si—Al substrate; protection layers formed on top and bottom surfaces of the Si—Al substrate; and a p-type semiconductor layer, an active layer, and an n-type semiconductor layer which are sequentially stacked on the protection layer formed on the top surface of the Si—Al substrate, and a method for manufacturing the same.

主权项

1. A method for manufacturing a compound semiconductor light emitting device comprising the steps of:
sequentially forming an n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a top surface of a growth substrate; preparing an Si—Al substrate having a protection layer on a surface of the Si—Al substrate by forming the protection layer on bottom and top surfaces of the Si—Al substrate; bonding the Si—Al substrate including the protection layer on the surface of the Si—Al substrate to the p-type semiconductor layer; separating the growth substrate from the n-type semiconductor layer; forming a plurality of n-side electrodes on the n-type semiconductor layer; and dicing the n-type semiconductor layer, the active layer, the p-type semiconductor layer, the protection layer, and the Si—Al substrate between the n-side electrodes to be divided into chip units.