| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
The semiconductor device includes; a semiconductor element in which a metallization layer is formed on the backside side; a metallic lead frame that is arranged in parallel, with a distance spaced apart from the semiconductor element; a first bonding layer that is provided between the semiconductor element and the lead frame, and is bonded to the metallization layer; and a second bonding layer that is provided between the semiconductor element and the lead frame, and bonds the first bonding layer to the lead frame. The first bonding layer is expanded at a central portion toward the lead frame. |
| 申请公布号 |
US2014367701(A1) |
申请公布日期 |
2014.12.18 |
| 申请号 |
US201314356488 |
申请日期 |
2013.01.10 |
| 申请人 |
Mitsubishi Electrict Corporation |
发明人 |
Fujino Junji |
| 分类号 |
H01L23/495;H01L23/00;H01L21/52 |
主分类号 |
H01L23/495 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a semiconductor element in which a metallization layer is formed on the backside side; a metallic lead frame that is arranged in parallel, with a distance spaced apart from said semiconductor element; a first bonding layer that is provided between said semiconductor element and said lead frame, and is bonded to said metallization layer; and a second bonding layer that is provided between said semiconductor element and said lead frame, and bonds said first bonding layer to said lead frame, wherein said first bonding layer is expanded at a central portion toward said lead frame and is higher in melting point than said second bonding layer. |
| 地址 |
Chiyoda-ku, Tokyo JP |
