| 摘要 |
A semiconductor light-emitting device constituted by: a semiconductor light-emitting element (100) emitting a first light, having a layered semiconductor layer (110) constituted by layering at least two or more semiconductor layers (103) (105) and a light-emitting layer (104); and a wavelength conversion member covering at least a portion of the semiconductor light-emitting element (100), absorbing at least a portion of the first light and emitting a second light having a wavelength different from the first light. The device is characterized in that, as a constitutive element on any of the main planes constituting the semiconductor light-emitting element (100), the semiconductor light-emitting element (100) is provided with a microstructural layer containing dots constituted from a plurality of depressions or protrusions extending outward from the plane, the microstructural layer constituting a two-dimensional photonic crystal (102) defined by any of at least the pitch between the dots, the dot diameter or the dot height, the two-dimensional photonic crystal (102) having at least two or more periods of 1 μm or greater each. |
