发明名称 PRODUCTION METHOD OF ZINC OXIDE SINGLE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To provide a production method of a zinc oxide single crystal by a solution process capable of raising a zinc oxide single crystal at higher speed than a hydrothermal method, and suitable for producing a large-sized single crystal.SOLUTION: A production method of a zinc oxide single crystal includes steps for: preparing an aqueous solution 16 for raising containing at least zinc ion and carboxylate ion and/or alkali metal ion as main components; and immersing a seed substrate 14 comprising a substrate obtained by depositing a single crystal body or a single crystal layer into the aqueous solution 16 for raising, and thereby raising the zinc oxide single crystal on the seed substrate.
申请公布号 JP2014234325(A) 申请公布日期 2014.12.15
申请号 JP20130116991 申请日期 2013.06.03
申请人 NGK INSULATORS LTD 发明人 WATANABE MORIMICHI;YOSHIKAWA JUN;YAMAGUCHI HIROFUMI;NANATAKI TSUTOMU
分类号 C30B29/16;C01G9/02;C30B7/00 主分类号 C30B29/16
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