发明名称 |
PRODUCTION METHOD OF ZINC OXIDE SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a production method of a zinc oxide single crystal by a solution process capable of raising a zinc oxide single crystal at higher speed than a hydrothermal method, and suitable for producing a large-sized single crystal.SOLUTION: A production method of a zinc oxide single crystal includes steps for: preparing an aqueous solution 16 for raising containing at least zinc ion and carboxylate ion and/or alkali metal ion as main components; and immersing a seed substrate 14 comprising a substrate obtained by depositing a single crystal body or a single crystal layer into the aqueous solution 16 for raising, and thereby raising the zinc oxide single crystal on the seed substrate. |
申请公布号 |
JP2014234325(A) |
申请公布日期 |
2014.12.15 |
申请号 |
JP20130116991 |
申请日期 |
2013.06.03 |
申请人 |
NGK INSULATORS LTD |
发明人 |
WATANABE MORIMICHI;YOSHIKAWA JUN;YAMAGUCHI HIROFUMI;NANATAKI TSUTOMU |
分类号 |
C30B29/16;C01G9/02;C30B7/00 |
主分类号 |
C30B29/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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