MANUFACTURING METHOD OF SILICON CARBIDE SINGLE CRYSTAL INGOT, AND SILICON CARBIDE SINGLE CRYSTAL INGOT

摘要

PROBLEM TO BE SOLVED: To manufacture a silicon carbide single crystal ingot having a large diameter and length by changing a temperature distribution of a silicon carbide raw material and efficiently sublimating the raw material charged in a crucible when manufacturing the silicon carbide single crystal ingot.SOLUTION: A silicon carbide single crystal ingot is manufactured by growing a silicon carbide single crystal on a seed crystal by a sublimation recrystallization method. One or more members among an exothermic member to generate heat by high frequency induction heating and an insulation member are moved relatively to the bottom of a silicon carbide raw material when growing the single crystal to control a temperature distribution so as to reduce a temperature difference between the peripheral part and the central part of the bottom of the silicon carbide raw material.