| 发明名称 |
METAL NITRIDE MATERIAL FOR THERMISTOR, METHOD FOR MANUFACTURING THE SAME, AND FILM-TYPE THERMISTOR SENSOR |
| 摘要 |
PROBLEM TO BE SOLVED: To provide: a highly reliable metal nitride material for a thermistor which can be shaped into a film or the like directly without a calcination process and has high heat resistance; a method for manufacturing such a metal nitride material for a thermistor; and a film-type thermistor sensor.SOLUTION: A metal nitride material is used for a thermistor. The metal nitride material comprises a metal nitride expressed by the following general formula: VAl(NO)(where 0.70≤y/(x+y)≤0.98; 0.45≤z≤0.55; 0<w≤0.35; and x+y+z=1), the crystal structure of which is a hexagonal wurtzite type single phase. A method for manufacturing the metal nitride material for a thermistor comprises a film formation step in which a film is formed by performing a reactive sputtering with a V-Al alloy sputtering target in an atmosphere containing nitrogen and oxygen. |
| 申请公布号 |
JP2014236205(A) |
申请公布日期 |
2014.12.15 |
| 申请号 |
JP20130119165 |
申请日期 |
2013.06.05 |
| 申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
FUJITA TOSHIAKI;TANAKA HIROSHI;NAGATOMO KENSHO |
| 分类号 |
H01C7/04;G01K7/16;G01K7/22;H01C17/12 |
主分类号 |
H01C7/04 |
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