| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device that allows improving ESD resistance and sensitivity to temperatures, and to provide a method of manufacturing the same.SOLUTION: An oxide film 16 is formed on a surface of a semiconductor substrate 1. A temperature-sensing diode 17 is formed on the oxide film 16. A trench 25 extending from the surface to the inside of the semiconductor substrate 1 is formed. A trench electrode 27 is buried in the trench 25 via an oxide film 26. The trench electrode 27 is connected to the temperature-sensing diode 17.</p> |
