CYCLIC ALUMINUM NITRIDE DEPOSITION IN A BATCH REACTOR

摘要

A process for depositing aluminum nitride is disclosed. The process includes: providing a plurality of semiconductor substrates into a batch process chamber; and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle includes: making an aluminum precursor pulse to flow into the batch process chamber; removing the aluminum precursor from the batch process chamber; and removing the nitrogen precursor from the batch process chamber after making the nitrogen precursor to flow and before making another pulse of the aluminum precursor to flow. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.