Semiconductor device and method of manufacturing the same

摘要

In a high electron mobility transistor, with a normally-off operation maintained, on-resistance can be sufficiently reduced, so that the performance of a semiconductor device including the high electron mobility transistor is improved. Between a channel layer and an electron supply layer, a spacer layer whose band gap is larger than the band gap of the electron supply layer is provided. Thereby, due to the fact that the band gap of the spacer layer is large, a high potential barrier (electron barrier) is formed in the vicinity of an interface between the channel and the electron supply layer.

主权项

1. A semiconductor device including a field-effect transistor, the field-effect transistor comprising:
(a) a channel layer composed of a first nitride semiconductor layer; (b) a spacer layer composed of a second nitride semiconductor layer formed on the channel layer; (c) an electron supply layer composed of a third nitride semiconductor layer formed on the spacer layer; (d) a source electrode formed on the electron supply layer; (e) a drain electrode formed on the electron supply layer and separated from the source electrode; (f) a p-type cap layer formed on the electron supply layer sandwiched between the source electrode and the drain electrode, wherein the electron supply layer between the spacer layer and the p-type cap layer is undoped; and (g) a gate electrode formed on the p-type cap layer, the spacer layer having a band-gap larger than that of the electron supply layer.