| 发明名称 |
DRY ETCHING METHOD, DRY ETCHING APPARATUS, METAL FILM, AND DEVICE INCLUDING THE METAL FILM |
| 摘要 |
In a dry etching method for etching a metal film formed on a substrate by use of etching gas containing β-diketone, the metal film contains at least one metal material that forms a penta- or hexa-coordinated complex structure with β-diketone; the etching gas containing β-diketone contains at least one additive among H2O or H2O2; and the additive is contained at a volume concentration of 1% or greater and 20% or less. |
| 申请公布号 |
US2014352716(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201414289747 |
申请日期 |
2014.05.29 |
| 申请人 |
CENTRAL GLASS COMPANY, LIMITED |
发明人 |
KIKUCHI Akiou;TAKEDA Yuta |
| 分类号 |
H01L21/3213;H01L21/67 |
主分类号 |
H01L21/3213 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A dry etching method for etching a metal film formed on a substrate by use of etching gas containing β-diketone, wherein:
the metal film contains at least one metal material that forms a penta- or hexa-coordinated complex structure with β-diketone; the etching gas containing β-diketone contains at least one additive among H2O or H2O2; and the additive is contained at a volume concentration of 1% or greater and 20% or less. |
| 地址 |
Ube JP |
