SEMICONDUCTOR MEMORY DEVICE

摘要

According to one embodiment, the semiconductor memory device includes a first memory cell, first, second, third and fourth interconnect lines and first, second and third write circuits. The first memory cell includes a first magnetic tunnel junction (MTJ) element. The first interconnect line is connected to one end of the first memory cell. The first write circuit drives the first interconnect line. The second interconnect line is connected to the other end of the first memory cell. The second write circuit drives the second interconnect line. The third and fourth interconnect lines are adjacent to the first memory cell. The third write circuit drives the third and fourth interconnect lines.

主权项

1. A semiconductor memory device comprising:
a first memory cell including a first magnetic tunnel junction (MTJ) element; a first interconnect line connected to one end of the first memory cell; a first write circuit which drives the first interconnect line; a second interconnect line connected to the other end of the first memory cell; a second write circuit which drives the second interconnect line; third and fourth interconnect lines adjacent to the first memory cell; and a third write circuit which drives the third and fourth interconnect lines.