| 发明名称 |
METHOD FOR INSPECTING POLYSILICON LAYER |
| 摘要 |
A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cm2 to 10 W/cm2, and peak power of the excitation light has a range of 100 W/cm2 to 1000 W/cm2. |
| 申请公布号 |
US2014353523(A1) |
申请公布日期 |
2014.12.04 |
| 申请号 |
US201314094051 |
申请日期 |
2013.12.02 |
| 申请人 |
Samsung Display Co., Ltd. |
发明人 |
VORONOV Alexander;LEE Suk-Ho;YOO Jae-Seung;HEO Kyung-Hoe;HAN Gyoo-Wan |
| 分类号 |
G01N21/64;G01N21/95 |
主分类号 |
G01N21/64 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for inspecting a polysilicon layer, comprising:
radiating excitation light onto the polysilicon layer; and detecting a photoluminescence signal generated in the polysilicon layer by the excitation light, wherein the excitation light has an average power in a range of 1 W/cm2 to 10 W/cm2, and a peak power of the excitation light is in a range of 100 W/cm2 to 1000 W/cm2. |
| 地址 |
Yongin-city KR |
