| 摘要 |
Disclosed are a thin film transistor, a display apparatus comprising the same, and a method for manufacturing the thin film transistor. For a thin film transistor which operates normally even when an insulating error is partly generated in a dual gate thin film transistor, a display apparatus comprising the same, and a method for manufacturing a thin film transistor, the present invention includes a substrate; a semiconductor layer arranged on the substrate; a first gate electrode and a second gate electrode which are arranged on the upper part of the semiconductor layer, a gate insulating layer which is interposed between the first gate electrode and the second gate electrode and the semiconductor layer, and has a first through-hole between the first gate electrode and the second gate electrode; and a capping layer which covers the first gate electrode, is in contact with the semiconductor layer through the first through-hole, and includes a conductive material. |
