| 摘要 |
FIELD: chemistry.SUBSTANCE: invention relates to the technology of manufacturing semi-conductor devices and silicon transistors, in particular to methods of protecting surfaces of crystals. The protection of the surface of the semi-conductor crystals is realised on the basis of an aluminium oxide film by a vacuum cathode sputtering. The creation of the protective film is carried out in a furnace at a temperature of 1050°C, with the temperature of the crystal being equal to 850°C. Aluminium oxide is used in the form of powder, with a halogen HBr being used as a carrying agent. Inert gas is passed through a working chamber and the difference of temperatures is created between the aluminium oxide source and the semi-conductor crystal. The distance between the aluminium oxide source and the crystal constitutes 15 cm. Control of the protective film thickness is performed by means of the microscope MII-4. The thickness of the aluminium oxide film constitutes ?=0.9±0.1 mcm.EFFECT: invention provides obtaining a uniform surface, the reduction of temperature and the process duration. |
