发明名称 |
STRUCTURE FOR GROWING HIGH-TEMPERATURE EPILAYER ON HETEROGENEOUS SUBSTRATE AND METHOD FOR MANUFACTURING SAME |
摘要 |
A method for manufacturing a heterogeneous substrate according to the present invention comprises the steps of: growing an inter-layer on top of a base substrate; forming a top layer on top of the inter-layer; growing a buffer layer having a low temperature on top of the top layer; forming a III-nitride epilayer having a high temperature on top of the buffer layer; and forming an inter-mixing layer between the base substrate and the inter-layer by a portion of the inter-layer coming into contact with the base substrate reacting with the base substrate, when the inter-layer acquires flexibility when growing the epilayer. According to the present invention, the inter-layer acquires flexibility when temperature is increased to grow the epilayer at a high temperature, and this portion is inter-mixed with the base substrate, thereby providing a high-quality characteristic of the epilayer that is ultimately grown so as to not be influenced by a lattice constant of a semiconductor base substrate, which is advantageous for a large area. |
申请公布号 |
WO2014185737(A1) |
申请公布日期 |
2014.11.20 |
申请号 |
WO2014KR04388 |
申请日期 |
2014.05.16 |
申请人 |
INDUSTRIAL COOPERATION FOUNDATION CHONBUK NATIONAL UNIVERSITY |
发明人 |
KIL, YEON HO;JUNG, JOO YOUNG;KIM, JOUNG HEE;CHOI, CHUL JONG;CHO, DEUK HO;SHIM, KYU HWAN |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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