SIMPLIFIED ISOLATION LAYER BASED ON IBAD-MGO METAL SUBSTRATE AND PREPARATION METHOD THEREOF

摘要

A simplified isolation layer based on an IBAD-MgO metal substrate. The simplified isolation layer is a single-layer CeO2 isolation layer deposited on the IBAD-MgO metal substrate. A depth of the simplified isolation layer is 50-500nm. Also comprised is a preparation method of the isolation layer.