Discontinuous/non-uniform metal cap structure and process for interconnect integration

摘要

A method of fabricating an interconnect structure is provided which includes providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material; and forming a noble metal-containing cap directly on the upper surface of the at least one conductive material, wherein the noble metal cap is discontinuous or non-uniform.

主权项

1. A method of fabricating an interconnect structure comprising:
providing a dielectric material having a dielectric constant of about 3.0 or less and at least one conductive material embedded therein, the at least one conductive material has an upper surface that is coplanar with an upper surface of the dielectric material; and forming a noble metal-containing cap directly on the upper surface of the at least one conductive material, wherein said forming the noble metal-containing cap comprises forming a continuous noble metal-containing cap across the entire upper surface of the at least one conductive material utilizing a deposition temperature of about 200° C. or less, and selectively removing portions of the continuous noble metal-containing cap to form the discontinuous or non-uniform noble metal-containing cap, wherein selectively removing includes a touch-up chemical mechanical polishing process.