| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a pattern by deleting only one region of phase-separated regions of a block copolymer.SOLUTION: A method for forming a pattern includes the steps of: a) forming a self-organizable block copolymer layer including a first and a second polymer on a ground layer (ST1); (b) processing a workpiece so that a first region including the first polymer and a second region including the second polymer are formed in the block copolymer layer (ST2); (c) etching the second region to the middle of a film thickness of the second region in a capacitively-coupled plasma processing device after the workpiece processing step (ST3); (d) generating secondary electrons from an upper electrode of the plasma processing device by applying negative DC voltage to the upper electrode and irradiating the workpiece with the secondary electrons after the second region etching step (ST4); and (e) further etching the second region in the plasma processing device after the workpiece irradiation step (ST5). |
