| 发明名称 |
LIGHT EMITTING DIODE CHIP AND MANUFACTURING METHOD THEREOF |
| 摘要 |
A light emitting diode (LED) chip includes an N-type semiconductor layer, a compensation layer arranged on the N-type semiconductor layer, an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer. During growth of the compensation layer, atoms of an element (i.e., Al) of the compensation layer move to fill epitaxial defects in the N-type semiconductor layer, wherein the epitaxial defects are formed due to lattice mismatch when growing the N-type semiconductor. A method for manufacturing the chip is also disclosed. The compensation layer is made of a compound having a composition of AlxGa1-xN. |
| 申请公布号 |
US2014327036(A1) |
申请公布日期 |
2014.11.06 |
| 申请号 |
US201314062830 |
申请日期 |
2013.10.24 |
| 申请人 |
ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
发明人 |
CHIU CHING-HSUEH;LIN YA-WEN;TU PO-MIN;HUANG SHIH-CHENG |
| 分类号 |
H01L33/00;H01L33/32 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode (LED) chip comprising:
an N-type semiconductor layer; a compensation layer arranged on the N-type semiconductor layer, atoms of a component of a compound constituting the compensation layer filling in epitaxial defects in the N-type semiconductor layer formed due to lattice mismatch; an active layer arranged on the compensation layer; and a P-type semiconductor layer arranged on the active layer. |
| 地址 |
Hsinchu Hsien TW |
