RESISTANCE RANDOM ACCESS MEMORY DEVICE

摘要

A resistance random access memory device is provided, including a first resistance change layer, a second resistance change layer and an ion source layer. The first resistance change layer is made of a first material. The second resistance change layer is provided on the first resistance change layer. The second resistance change layer is made of a second material different from the first material. The ion source layer is provided on the second resistance change layer. The ion source layer includes a metal. The metal is able to reversibly move within the first resistance change layer and within the second resistance change layer. A width of the first resistance change layer is narrower than a width of the second resistance change layer.

主权项

1. A resistance random access memory device, comprising:
a first resistance change layer comprising a first material; a second resistance change layer provided on the first resistance change layer, the second resistance change layer comprising a second material different from the first material; and an ion source layer provided on the second resistance change layer, the ion source layer comprising a metal, the metal being able to reversibly move within the first resistance change layer and within the second resistance change layer, a width of the first resistance change layer being narrower than a width of the second resistance change layer.