| 摘要 |
Process for the preparation of polycrystalline silicon, comprising deposition of polycrystalline silicon on support bodies located in at least one reactor, as a result of which polycrystalline silicon rods are obtained, formation of the polycrystalline silicon rods from the at least one reactor, comminution of the formed polycrystalline silicon rods into segments, characterized in that after the formation of the polycrystalline silicon rods from the at least one reactor and before the comminution of the formed polycrystalline silicon rods into segments, the polycrystalline silicon present in rod form is classified by reference to at least one feature in at least two quality classes, with every at least two quality classes being passed to separate further processing steps. |
