| 摘要 |
A method for producing a single crystal utilizing a single crystal pulling-up apparatus which is equipped with a chamber, a crucible that is arranged in the chamber and can house a dopant-added melt prepared by adding red phosphorous to a silicon melt, and a pulling-up unit for bringing a seed crystal into contact with the dopant-added melt and then pulling up the seed crystal. In the method, red phosphorous is added to the silicon melt in such a manner that the resistivity of the single crystal can become 0.7 to 0.9 m&OHgr;·cm inclusive; a silicon wafer to be evaluated, which is produced from the single crystal, is subjected to a heat treatment in which the silicon wafer is heated in a hydrogen atmosphere having a temperature of 1200˚C for 30 seconds; and then the single crystal is pulled up while arbitrarily controlling a time during which the temperature of the single crystal becomes 570˚C ± 70˚C, so that the number of pits occurring in the silicon wafer to be evaluated can become 0.1 pit/cm2 or less. |
