Method of multiple patterning to form semiconductor devices

摘要

A method of forming different structures of a semiconductor device using a single mask and a hybrid photoresist. The method includes: applying a first photoresist layer on a semiconductor substrate; patterning the first photoresist layer using a photomask to form a first patterned photoresist layer; using the first patterned photoresist layer to form a first structure of a semiconductor device; removing the first patterned photoresist layer; applying a second photoresist layer on the semiconductor substrate; patterning the second photoresist layer using the photomask to form a second patterned photoresist layer; using the second patterned photoresist layer to form a second structure of a semiconductor device; removing the second patterned photoresist layer; and wherein either the first or the second photoresist layer is a hybrid photoresist layer comprising a hybrid photoresist.

主权项

1. A method, comprising:
applying a first photoresist layer on a semiconductor substrate; patterning said first photoresist layer using a photomask to form a first patterned photoresist layer; using said first patterned photoresist layer to form a first structure of a semiconductor device; removing said first patterned photoresist layer; applying a second photoresist layer on said semiconductor substrate; patterning said second photoresist layer using said photomask to form a second patterned photoresist layer; using said second patterned photoresist layer to form a second structure of a semiconductor device; removing said second patterned photoresist layer; and wherein either said first photoresist layer is a hybrid photoresist layer comprising a hybrid photoresist and said first patterned photoresist layer comprises a first region of a first thickness, a second region of a second thickness different from said first thickness and a hybrid region where said first photoresist layer is completely removed, said first and second regions abutting and separated by said hybrid region and wherein said first structure is defined by said hybrid region in said first photoresist layer; or wherein said second photoresist layer is a hybrid photoresist layer said second patterned photoresist layer comprises a first region of a first thickness, a second region of a second thickness different from said first thickness and a hybrid region between said first and second regions where said second photoresist layer is completely removed, said first and second regions abutting and separated by said hybrid region and wherein said second structure is defined by said hybrid region in said second photoresist layer.