Method for forming high density patterns

摘要

In one or more embodiments, a method is provided for forming an integrated circuit with a pattern of isolated features having a final density of isolated features that is greater than a starting density of isolated features in an integrated circuit by a multiple of two or more. The method can include forming a pattern of pillars having a density X, and forming a pattern of holes amongst the pillars, the holes having a density at least X. The pillars can be selectively removed to form a pattern of holes having a density at least 2X. In some embodiments, plugs can be formed in the pattern of holes, such as by epitaxial deposition on the substrate, in order to provide a pattern of pillars having a density 2X. In other embodiments, the pattern of holes can be transferred to the substrate by etching.

主权项

1. A method for integrated circuit fabrication, comprising:
providing a substrate; providing a set of spaced-apart pillars over the substrate; replacing the pillars with a first plurality of holes; providing a second plurality of holes interspersed amongst the first plurality of holes; and forming a second set of pillars in the first and second pluralities of holes.