IMAGE SENSOR HAVING METAL CONTACT COUPLED THROUGH A CONTACT ETCH STOP LAYER WITH AN ISOLATION REGION

摘要

An image sensor pixel comprises at least one or more photodiodes disposed on a semiconductor layer. A pixel circuit connected to at least one or more photodiodes is disposed on the semiconductor layer. A passivation layer is disposed adjacent to the semiconductor layer on the pixel circuit and at least one or more photodiodes. A contact edge stop layer is disposed on the passivation layer. At least one or more metal contacts are connected to the pixel circuit through the contact edge stop layer. At least one or more element isolation layers are defined on the contact edge stop layer to isolate a contact edge stop layer material connecting at least one or more metal contacts to the pixel circuit from at least one or more photodiodes.