发明名称 SUBSTRATE PROCESSING METHOD
摘要 <p>Provided is a substrate processing method capable of inhibiting a substrate surface from being charged. According to the present invention, the substrate processing method comprises: a first processing step of rotating a substrate and supplying a liquid including pure water to the substrate; and a second processing step of rotating the substrate and supplying the liquid to the substrate after the first processing step. The second processing step is performed under the condition that the surface potential increase rate of the substrate is lower than that of the first processing step. For example, in the second processing step, the rotating speed of the substrate is lower than that of the first processing step.</p>
申请公布号 KR20140120838(A) 申请公布日期 2014.10.14
申请号 KR20140038691 申请日期 2014.04.01
申请人 EBARA CORPORATION 发明人 ISHIBASHI TOMOATSU
分类号 H01L21/304;H01L21/08 主分类号 H01L21/304
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