发明名称 |
Photovoltaic device and process for producing photovoltaic device |
摘要 |
A photovoltaic device that exhibits increased open-circuit voltage and an improved fill factor due to an improvement in the contact properties between the n-layer and a back-side transparent electrode layer or intermediate contact layer, and a process for producing the photovoltaic device. The photovoltaic device comprises a photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein the n-layer comprises a nitrogen-containing n-layer and an interface treatment layer formed on the opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6. |
申请公布号 |
US8859887(B2) |
申请公布日期 |
2014.10.14 |
申请号 |
US200912997418 |
申请日期 |
2009.07.08 |
申请人 |
Mitsubishi Heavy Industries, Ltd. |
发明人 |
Tsuruga Shigenori;Yamaguchi Kengo;Goya Saneyuki;Sakai Satoshi |
分类号 |
H01L31/105;H01L31/18;H01L27/142;H01L31/076;H01L31/077 |
主分类号 |
H01L31/105 |
代理机构 |
|
代理人 |
Kanesaka Manabu;Hauptman Benjamin J. |
主权项 |
1. A photovoltaic device comprising a photovoltaic layer and a back-side transparent electrode layer, the photovoltaic layer having a p-layer, an i-layer and an n-layer stacked on top of a substrate, wherein
the n-layer comprises a nitrogen-containing n-layer, and an interface treatment layer formed on an opposite surface of the nitrogen-containing n-layer to the substrate, the nitrogen-containing n-layer comprises nitrogen atoms at an atomic concentration of not less than 1% and not more than 20%, and has a crystallization ratio of not less than 0 but less than 3, the interface treatment layer contacts the back-side transparent electrode layer, and the interface treatment layer has a crystallization ratio of not less than 1 and not more than 6, and has a conductivity of not less than 1 S/cm and not more than 100 S/cm. |
地址 |
Tokyo JP |