| 摘要 |
Provided is a light emitting device, which includes a metal layer (175), a light emitting structure (135) comprising a first conductive type semiconductor layer (130), an active layer (120), and a second conductive type semiconductor layer (110); an electrode (115) disposed on a first upper portion of the second conductive type semiconductor layer; a current spreading portion (116b) disposed on a second upper portion of the second conductive type semiconductor layer; an adhesive layer (170) disposed under the first conductive type semiconductor layer; an insulating layer (145) disposed between the electrode and the adhesive layer; and a passivation layer (180) disposed on an inclined surface of the light emitting structure and on a at least one upper surface of the light emitting structure, wherein the electrode (115) has a first layer, wherein the electrode contacts the current spreading portion (116b) and an upper surface of the electrode (115) has a first roughness, wherein an upper surface of the second conductive type semiconductor layer (110) has a second roughness, and wherein the current spreading portion (116b) has an inclined surface. |
