METHOD OF READING DATA FROM A NONVOLATILE MEMORY DEVICE, NONVOLATILE MEMORY DEVICE, AND METHOD OF OPERATING A MEMORY SYSTEM

摘要

In a method of reading data from a nonvolatile memory device, a first read operation for memory cells coupled to a first word line is performed by applying a first read voltage to the first word line, a first read retry is performed to obtain an optimal read level regardless or independent of whether data read by the first read operation is error-correctable, and the optimal read level is stored to perform a subsequent second read operation using the optimal read level. Related methods and devices are also discussed. (WL1) Si+1 Threshold ECC Voltage Correctable 210 Range (WL2) i S +1 Threshold ECC Voltage Correctable 230 Range (WL3) S +1 Threshold 1ECC Voltage Correctable 250 Range (WL4) Si+1 Threshold 'ECC Voltage Correctable 270 Range